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PM100CG1A065 Mitsubishi IGBT Modules 650V 100A Siemens Successor is SIRIUS 3RV2 Preferred

PM100CG1A065 Mitsubishi IGBT Modules 650V 100A Siemens Successor is SIRIUS 3RV2 PreferredPM100CG1A065 Mitsubishi IGBT Modules 650V 100A Manufacturer: Mitsubishi Electric Product Category: IGBT Modules Product: IGBT Silicon Modules Configuration: 6 Pack Collector Emitter Voltage VCEO Max: 650 V Collector Emitter Saturation Voltage: 1. 25 V Continuous Collector Current at 25 C: 100 A Gate Emitter Leakage Current: Pd Power Dissipation: 357 W Minimum Operating Temperature: 20 C Maximum Operating Temperature: + 125 C Brand: Mitsubishi Electric

SKU: 56304074470 · From crisbcreativa.com

4.6
USD159.00 USD195.00

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Description

Successor is SIRIUS 3RV2 Preferred successor type is >>3RV2031-4WA10<<

In=200A without overload protection short-circuit protection Ii=6

00 Package size unit of measure CM Quantity Unit 1 Piece Packaging Quantity 1 Additional Product Information EAN Not available UPC 662643431001 Commodity Code 85389091 LKZ_FDB/ CatalogID DA65E/LD Product Group 4933 Group Code R2S7 Country of origin Germany

173 Kg Packaging Dimension 7

00 Package size unit of measure MM Quantity Unit 1 Piece Packaging Quantity 1 Additional Product Information EAN 4042948687932 UPC 804766796050 Commodity Code 85044095 LKZ_FDB/ CatalogID D11

PM100CG1A065 Mitsubishi IGBT Modules 650V 100A Siemens Successor is SIRIUS 3RV2 PreferredPM100CG1A065 Mitsubishi IGBT Modules 650V 100A Manufacturer: Mitsubishi Electric Product Category: IGBT Modules Product: IGBT Silicon Modules Configuration: 6 Pack Collector Emitter Voltage VCEO Max: 650 V Collector Emitter Saturation Voltage: 1. 25 V Continuous Collector Current at 25 C: 100 A Gate Emitter Leakage Current: Pd Power Dissipation: 357 W Minimum Operating Temperature: 20 C Maximum Operating Temperature: + 125 C Brand: Mitsubishi Electric

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